Invention Grant
- Patent Title: Charge pump circuit, semiconductor device, and semiconductor memory device
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Application No.: US16743324Application Date: 2020-01-15
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Publication No.: US10972005B2Publication Date: 2021-04-06
- Inventor: Hiroki Murakami
- Applicant: Winbond Electronics Corp.
- Applicant Address: TW Taichung
- Assignee: Winbond Electronics Corp.
- Current Assignee: Winbond Electronics Corp.
- Current Assignee Address: TW Taichung
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: JPJP2019-012678 20190129
- Main IPC: G11C5/14
- IPC: G11C5/14 ; H02M3/07 ; G11C16/30
Abstract:
A charge pump circuit that suppresses low boost efficiency is provided. The charge pump circuit 100 of the invention includes a main pump circuit CPn_M and a gate controlling pump circuit CPn_G controlling the main pump circuit CPn_M. The main pump circuit has the same basic configuration as the controlling pump circuit, which are both KER-type pump circuits. The controlling pump circuit controls the operation of a transistor of the main pump circuit after the main pump circuit is boosted, so that reverse current will not flow from the main pump circuit to the forward section of the pump circuit.
Public/Granted literature
- US10938301B2 Charge pump circuit, semiconductor device, and semiconductor memory device Public/Granted day:2021-03-02
Information query
