Invention Grant
- Patent Title: Radio frequency power amplifier and power amplifier module
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Application No.: US16569271Application Date: 2019-09-12
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Publication No.: US10972060B2Publication Date: 2021-04-06
- Inventor: Kenji Sasaki , Isao Obu , Takayuki Tsutsui
- Applicant: Murata Manufacturing Co., Ltd.
- Applicant Address: JP Kyoto-fu
- Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee Address: JP Kyoto-fu
- Agency: Studebaker & Brackett PC
- Priority: JPJP2018-172851 20180914,JPJP2019-122978 20190701
- Main IPC: H03F3/191
- IPC: H03F3/191 ; H03F3/19 ; H03F1/30 ; H03F3/213

Abstract:
In a radio frequency power amplifier, a semiconductor chip includes at least one first transistor amplifying a radio frequency signal, a first external-connection conductive member connected to the first transistor, a bias circuit including a second transistor that applies a bias voltage to the first transistor, and a second external-connection conductive member connected to the second transistor. The second external-connection conductive member at least partially overlaps with the second transistor when viewed in plan.
Public/Granted literature
- US20200091874A1 RADIO FREQUENCY POWER AMPLIFIER AND POWER AMPLIFIER MODULE Public/Granted day:2020-03-19
Information query
IPC分类: