- 专利标题： MOS transistor with folded channel and folded drift region
-
申请号： US16983585申请日： 2020-08-03
-
公开(公告)号： US10978559B1公开(公告)日： 2021-04-13
- 发明人: Sheldon Douglas Haynie , Alexei Sadovnikov
- 申请人： Texas Instruments Incorporated
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 代理商 Jacqueline J. Garner; Charles A. Brill; Frank D. Cimino
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01L29/78 ; H01L29/66 ; H01L29/40
摘要：
A semiconductor device includes a folded drain extended metal oxide semiconductor (DEMOS) transistor. The semiconductor device has a substrate including a semiconductor material with a corrugated top surface. The corrugated top surface has an upper portion, a lower portion, a first lateral portion extending from the upper portion to the lower portion, and a second lateral portion extending from the upper portion to the lower portion. The folded DEMOS transistor includes a body in the semiconductor material, a gate on a gate dielectric layer over the body, a drift region contacting the body, and a field plate on a field plate dielectric layer, all extending continuously along the upper portion, the first lateral portion, the second lateral portion, and the lower portion of the corrugated top surface. Methods of forming the folded DEMOS transistor are disclosed.
信息查询
IPC分类:
