- 专利标题: Vapor deposition mask, vapor deposition mask preparation body, method for producing vapor deposition mask, and method for producing organic semiconductor element
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申请号: US16787438申请日: 2020-02-11
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公开(公告)号: US10982317B2公开(公告)日: 2021-04-20
- 发明人: Katsunari Obata , Toshihiko Takeda , Hiroshi Kawasaki , Hiroyuki Nishimura , Atsushi Maki , Hiromitsu Ochiai , Yoshinori Hirobe
- 申请人: Dai Nippon Printing Co., Ltd.
- 申请人地址: JP Tokyo
- 专利权人: Dai Nippon Printing Co., Ltd.
- 当前专利权人: Dai Nippon Printing Co., Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Burr & Brown, PLLC
- 优先权: JP2013-063295 20130326,JP2014-059432 20140324
- 主分类号: C23C14/04
- IPC分类号: C23C14/04 ; H01L51/00 ; H01L51/56
摘要:
There are provided a vapor deposition mask capable of satisfying both high definition and lightweight in upsizing and forming a vapor deposition pattern with high definition while securing strength, a vapor deposition mask preparation body capable of simply producing the vapor deposition mask and a method for producing a vapor deposition mask, and furthermore, a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition. A metal mask 10 in which a slit 15 is provided and a resin mask 20 in which openings 25 corresponding to a pattern to be produced by vapor deposition are provided at a position of overlapping with the slit 15 are stacked, and the metal mask 10 has a general region 10a in which the slit 15 is provided and a thick region 10b larger in thickness than the general region.
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