Invention Grant
- Patent Title: Method for forming semiconductor device structure
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Application No.: US16859779Application Date: 2020-04-27
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Publication No.: US10985277B2Publication Date: 2021-04-20
- Inventor: Kuo-Cheng Ching , Kuan-Ting Pan , Kuan-Lun Cheng , Chih-Hao Wang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L27/088 ; H01L29/16 ; H01L21/8234

Abstract:
A method includes forming a first semiconductor layer over a substrate. A second semiconductor layer is formed over the first semiconductor layer. The first semiconductor layer and the second semiconductor layer are etched to form a fin structure that extends from the substrate. The fin structure has a remaining portion of first semiconductor layer and a remaining portion of the second semiconductor layer atop the remaining portion of the first semiconductor layer. A capping layer is formed to wrap around three sides of the fin structure. At least a portion of the capping layer and at least a portion of the remaining portion of the second semiconductor layer in the fin structure are oxidized to form an oxide layer wrapping around three sides of the fin structure.
Public/Granted literature
- US20200259014A1 METHOD FOR FORMING SEMICONDUCTOR DEVICE STRUCTURE Public/Granted day:2020-08-13
Information query
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