Invention Grant
- Patent Title: Method for manufacturing semiconductor device
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Application No.: US15211160Application Date: 2016-07-15
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Publication No.: US10985278B2Publication Date: 2021-04-20
- Inventor: Tetsuya Kakehata
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi
- Agency: Fish & Richardson P.C.
- Priority: JPJP2015-143858 20150721
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/786 ; H01L29/66
Abstract:
An insulator is formed over a substrate, an opening is formed in the insulator, and an oxide semiconductor is formed in the opening. Then, part of the insulator is removed to expose a side surface of the oxide semiconductor.
Public/Granted literature
- US20170025543A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2017-01-26
Information query
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