- 专利标题: R-T-B based permanent magnet
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申请号: US16823487申请日: 2020-03-19
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公开(公告)号: US10991492B2公开(公告)日: 2021-04-27
- 发明人: Mariko Fujiwara , Makoto Iwasaki
- 申请人: TDK CORPORATION
- 申请人地址: JP Tokyo
- 专利权人: TDK CORPORATION
- 当前专利权人: TDK CORPORATION
- 当前专利权人地址: JP Tokyo
- 代理机构: Oliff PLC
- 优先权: JPJP2019-053644 20190320
- 主分类号: C22C38/16
- IPC分类号: C22C38/16 ; C22C38/14 ; C22C38/10 ; C22C38/00 ; C22C38/06 ; H01F1/057 ; B22F3/24
摘要:
The present invention provides an R-T-B based permanent magnet capable of improving a coercive force HcJ while maintaining a residual magnetic flux density Br.
The R-T-B based permanent magnet includes Ga. R is one or more selected from rare earth elements, T is Fe or a combination of Fe and Co, and B is boron. The R-T-B based permanent magnet has main phase grains including a crystal grain having an R2T14B crystal structure and grain boundaries formed between adjacent two or more main phase grains, and 0.030≤[Ga]/[R]≤0.100 is satisfied in which [Ga] represents an atomic concentration of Ga and [R] represents an atomic concentration of R in the main phase grains.
The R-T-B based permanent magnet includes Ga. R is one or more selected from rare earth elements, T is Fe or a combination of Fe and Co, and B is boron. The R-T-B based permanent magnet has main phase grains including a crystal grain having an R2T14B crystal structure and grain boundaries formed between adjacent two or more main phase grains, and 0.030≤[Ga]/[R]≤0.100 is satisfied in which [Ga] represents an atomic concentration of Ga and [R] represents an atomic concentration of R in the main phase grains.
公开/授权文献
- US20200303098A1 R-T-B BASED PERMANENT MAGNET 公开/授权日:2020-09-24
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