- 专利标题: Isolation structure for bond pad structure
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申请号: US16532781申请日: 2019-08-06
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公开(公告)号: US10991667B2公开(公告)日: 2021-04-27
- 发明人: Sin-Yao Huang , Jeng-Shyan Lin , Shih-Pei Chou , Tzu-Hsuan Hsu
- 申请人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Eschweiler & Potashnik, LLC
- 主分类号: H01L23/00
- IPC分类号: H01L23/00 ; H01L27/146
摘要:
Various embodiments of the present disclosure are directed towards a semiconductor device structure including a bond pad isolation structure. A semiconductor substrate has a back-side surface and a front-side surface opposite the back-side surface. A bond pad extends through the semiconductor substrate. The bond pad isolation structure is disposed within the semiconductor substrate. The bond pad isolation structure extends from the front-side surface to the back-side surface of the semiconductor substrate and continuously extends around the bond pad.
公开/授权文献
- US20210043593A1 ISOLATION STRUCTURE FOR BOND PAD STRUCTURE 公开/授权日:2021-02-11
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