- 专利标题： Silicon carbide semiconductor device having a conductive layer formed above a bottom surface of a well region so as not to be in ohmic connection with the well region and power converter including the same
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申请号： US16477119申请日： 2018-02-22
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公开(公告)号： US10991822B2公开(公告)日： 2021-04-27
- 发明人: Yuichi Nagahisa , Shiro Hino , Koji Sadamatsu , Hideyuki Hatta , Kotaro Kawahara
- 申请人： Mitsubishi Electric Corporation
- 申请人地址： JP Chiyoda-ku
- 专利权人： Mitsubishi Electric Corporation
- 当前专利权人： Mitsubishi Electric Corporation
- 当前专利权人地址： JP Chiyoda-ku
- 代理机构： Xsensus LLP
- 优先权： JPJP2017-033097 20170224
- 国际申请： PCT/JP2018/006494 WO 20180222
- 国际公布： WO2018/155566 WO 20180830
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/16 ; H01L29/417 ; H01L29/47 ; H01L29/06 ; H01L27/06 ; H02P27/08 ; H01L29/872 ; H01L21/8234 ; H02M7/5387
摘要：
In an SiC-MOSFET with a built-in Schottky diode, a bipolar current may be passed in a second well region formed at a terminal part to reduce a breakdown voltage. In the SiC-MOSFET with the built-in Schottky diode, a conductive layer in Schottky connection with the second well region is provided on the second well region in the terminal part, and the conductive layer is electrically connected with a source electrode of the MOSFET. A conductive layer contact hole is provided for connecting only the conductive layer and the source electrode.
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