Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16252715Application Date: 2019-01-21
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Publication No.: US10991824B2Publication Date: 2021-04-27
- Inventor: Cheng-Han Wu , Hsin-Yu Chen , Chun-Hao Lin , Shou-Wei Hsieh , Chih-Ming Su , Yi-Ren Chen , Yuan-Ting Chuang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: TW107146345 20181221
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L27/092 ; H01L29/66 ; H01L29/78 ; H01L21/8234 ; H01L21/762 ; H01L29/417
Abstract:
A semiconductor device includes: a fin-shaped structure on the substrate; a shallow trench isolation (STI) around the fin-shaped structure; a single diffusion break (SDB) structure in the fin-shaped structure for dividing the fin-shaped structure into a first portion and a second portion; a first gate structure on the fin-shaped structure; a second gate structure on the STI; and a third gate structure on the SDB structure, wherein a width of the third gate structure is greater than a width of the second gate structure.
Information query
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