Invention Grant
- Patent Title: High-rate high-swing drive circuit applied to silicon photonic modulator
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Application No.: US16146259Application Date: 2018-09-28
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Publication No.: US10996495B2Publication Date: 2021-05-04
- Inventor: Wenrui Zhu , David Zhang , Lei Zhao
- Applicant: HUAWEI TECHNOLOGIES CO., LTD.
- Applicant Address: CN Guangdong
- Assignee: HUAWEI TECHNOLOGIES CO., LTD.
- Current Assignee: HUAWEI TECHNOLOGIES CO., LTD.
- Current Assignee Address: CN Guangdong
- Agency: Fish & Richardson P.C.
- Priority: CN201610200288.6 20160331
- Main IPC: G02F1/01
- IPC: G02F1/01 ; G02F1/21 ; H03K19/0948

Abstract:
A high-rate high-swing drive circuit applied to a silicon photonic modulator is disclosed. The drive circuit is connected to a drive pre-stage circuit and a modulator load. The drive circuit includes at least one output circuit, and the output circuit includes: a first inverter, a first voltage bias module, a second inverter, a second voltage bias module, and an inductor. The drive circuit formed by using such a circuit connection increases an output swing of a drive while ensuring a high rate.
Public/Granted literature
- US20190033629A1 HIGH-RATE HIGH-SWING DRIVE CIRCUIT APPLIED TO SILICON PHOTONIC MODULATOR Public/Granted day:2019-01-31
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