Invention Grant
- Patent Title: Compound semiconductor and manufacturing method thereof
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Application No.: US15515120Application Date: 2015-09-25
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Publication No.: US11001504B2Publication Date: 2021-05-11
- Inventor: Jae-Ki Lee , Tae-Hoon Kim , Cheol-Hee Park
- Applicant: LG CHEM, LTD.
- Applicant Address: KR Seoul
- Assignee: LG CHEM, LTD.
- Current Assignee: LG CHEM, LTD.
- Current Assignee Address: KR Seoul
- Priority: KR10-2014-0130569 20140929
- International Application: PCT/KR2015/010192 WO 20150925
- International Announcement: WO2016/052948 WO 20160407
- Main IPC: C01F17/30
- IPC: C01F17/30 ; H01L35/14 ; H01L35/34 ; H01L21/02 ; H01L31/0224 ; H01L35/00 ; C22C1/00 ; C22C12/00
Abstract:
Disclosed is a compound semiconductor material with excellent performance and its utilization. The compound semiconductor may be expressed by Chemical Formula 1 below: M1aCo4Sb12-xM2x Chemical Formula 1 where M1 and M2 are respectively at least one selected from In and a rare earth metal element, 0≤a≤1.8, and 0≤x≤0.6.
Public/Granted literature
- US20170217783A1 COMPOUND SEMICONDUCTOR AND MANUFACTURING METHOD THEREOF Public/Granted day:2017-08-03
Information query
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