A display apparatus can include a first transistor disposed on a substrate, the first transistor including a first active layer made of low temperature polycrystalline silicon (LTPS); a circuit insulating layer disposed on the first transistor; a second transistor disposed on the circuit insulating layer, the second transistor including a second active layer made of an oxide semiconductor; a driving transistor disposed on the circuit insulating layer, the driving transistor having a back channel etch structure (BCE) and an active layer made of the oxide semiconductor; and a light emitting diode electrically connected to the driving transistor, in which the circuit insulating layer is disposed between the first transistor and the driving and second transistors.