Invention Grant
- Patent Title: Semiconductor device with a multi-layered encapsulant and associated systems, devices, and methods
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Application No.: US16436461Application Date: 2019-06-10
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Publication No.: US11004697B2Publication Date: 2021-05-11
- Inventor: Shijian Luo , Jonathan S. Hacker
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Main IPC: H01L21/56
- IPC: H01L21/56 ; H01L23/31 ; H01L23/00
Abstract:
A semiconductor device includes a substrate including traces, wherein the traces protrude above a top surface of the substrate; a prefill material over the substrate and between the traces, wherein the prefill material directly contacts peripheral surfaces of the traces; a die attached over the substrate; and a wafer-level underfill between the prefill material and the die.
Public/Granted literature
- US20190311918A1 SEMICONDUCTOR DEVICE WITH A MULTI-LAYERED ENCAPSULANT AND ASSOCIATED SYSTEMS, DEVICES, AND METHODS Public/Granted day:2019-10-10
Information query
IPC分类:
