Invention Grant
- Patent Title: Thin film transistor and manufacturing method thereof, array substrate and display device
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Application No.: US16446744Application Date: 2019-06-20
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Publication No.: US11011645B2Publication Date: 2021-05-18
- Inventor: Qingrong Ren , Guangcai Yuan , Feng Guan , Dongsheng Li , Jianming Sun
- Applicant: BOE Technology Group Co., Ltd.
- Applicant Address: CN Beijing
- Assignee: BOE Technology Group Co., Ltd.
- Current Assignee: BOE Technology Group Co., Ltd.
- Current Assignee Address: CN Beijing
- Agency: Fay Sharpe LLP
- Priority: CN201810738924.X 20180706
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/24 ; H01L29/66

Abstract:
The present disclosure discloses a thin film transistor and a manufacturing method thereof, an array substrate and a display device, and belongs to the field of semiconductor display technology. The active layer of the thin film transistor is made of a CIGS material. By manufacturing the active layer of the thin film transistor with the CIGS material, and the crystal defects of the CIGS are less than LTPS and IGZO, the mobility of the thin film transistor is higher, and the switching speed of the thin film transistor is faster, thereby being advantageous to further improve the resolution of the display device.
Public/Granted literature
- US20200013902A1 THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE AND DISPLAY DEVICE Public/Granted day:2020-01-09
Information query
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