- 专利标题： Memory devices and methods for forming the same
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申请号： US16534608申请日： 2019-08-07
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公开(公告)号： US11011702B2公开(公告)日： 2021-05-18
- 发明人: Bo-Lun Wu , Shih-Ning Tsai , Po-Yen Hsu
- 申请人： Winbond Electronics Corp.
- 申请人地址： TW Taichung
- 专利权人： Winbond Electronics Corp.
- 当前专利权人： Winbond Electronics Corp.
- 当前专利权人地址： TW Taichung
- 代理机构： Muncy, Geissler, Olds & Lowe, P.C.
- 主分类号： H01L45/00
- IPC分类号： H01L45/00
摘要：
A memory device includes a first electrode, a resistive switching layer, a cap layer, a protective layer, and a second electrode. The resistive switching layer is disposed over the first electrode. The cap layer is disposed over the resistive switching layer, wherein the bottom surface of the cap layer is smaller than the top surface of the resistive switching layer. The protective layer is disposed over the resistive switching layer and surrounds the cap layer. At least a portion of the second electrode is disposed over the cap layer and covers the protective layer.
公开/授权文献
- US20210043836A1 MEMORY DEVICES AND METHODS FOR FORMING THE SAME 公开/授权日：2021-02-11
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