- 专利标题： Semiconductor memory device including artificial drain select gate and method for driving same
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申请号： US16128103申请日： 2018-09-11
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公开(公告)号： US11018150B2公开(公告)日： 2021-05-25
- 发明人: Kotaro Fujii , Yasuhiro Uchiyama , Masaru Kito
- 申请人： TOSHIBA MEMORY CORPORATION
- 申请人地址： JP Minato-ku
- 专利权人： TOSHIBA MEMORY CORPORATION
- 当前专利权人： TOSHIBA MEMORY CORPORATION
- 当前专利权人地址： JP Minato-ku
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JPJP2018-004761 20180116
- 主分类号： H01L27/1157
- IPC分类号： H01L27/1157 ; H01L27/11582 ; H01L27/11565
摘要：
A semiconductor memory device includes a first electrode film, a second electrode film separated from the first electrode film in a first direction, a third electrode film separated from the second electrode film in the first direction, a fourth electrode film separated from the third electrode film in the first direction, and a first and a second semiconductor members extending in the first direction. The second electrode film includes a first conductive portion, an insulating portion, and a second conductive portion arranged along a second direction. The first semiconductor member pierces the first, third and fourth electrode films and the insulating portion of the second electrode film. The second semiconductor member pierces the first, third and fourth electrode films, and the first conductive portion or the second conductive portion of the second electrode film.
公开/授权文献
- US20190221576A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR DRIVING SAME 公开/授权日：2019-07-18
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