Invention Grant
- Patent Title: Devices and systems with string drivers including high band gap material and methods of formation
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Application No.: US16110217Application Date: 2018-08-23
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Publication No.: US11018255B2Publication Date: 2021-05-25
- Inventor: Haitao Liu , Guangyu Huang , Chandra V. Mouli , Akira Goda , Deepak Chandra Pandey , Kamal M. Karda
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/24 ; H01L29/423 ; H01L29/267 ; H01L27/11556 ; H01L29/66 ; H01L21/02 ; H01L21/44 ; H01L27/11582 ; H01L29/08 ; H01L21/425 ; H01L29/10 ; H01L29/786 ; H01L27/1157 ; H01L29/36 ; H01L29/49 ; H01L29/417
Abstract:
A device includes a string driver comprising a channel region between a drain region and a source region. At least one of the channel region, the drain region, and the source region comprises a high band gap material. A gate region is adjacent and spaced from the high band gap material. The string driver is configured for high-voltage operation in association with an array of charge storage devices (e.g., 2D NAND or 3D NAND). Additional devices and systems (e.g., non-volatile memory systems) including the string drivers are disclosed, as are methods of forming the string drivers.
Public/Granted literature
- US20190067475A1 DEVICES AND SYSTEMS WITH STRING DRIVERS INCLUDING HIGH BAND GAP MATERIAL AND METHODS OF FORMATION Public/Granted day:2019-02-28
Information query
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