Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US16653127Application Date: 2019-10-15
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Publication No.: US11024566B2Publication Date: 2021-06-01
- Inventor: Shinichi Uchida , Akio Ono , Shinichi Kuwabara , Yasutaka Nakashiba
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JPJP2018-221443 20181127
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/522 ; H01L25/065 ; H01L23/31 ; H01L23/00 ; H01L23/64

Abstract:
A first semiconductor chip and a second semiconductor chip are stacked such that a first inductor and a second inductor face each other. An insulating sheet is disposed between the first semiconductor chip and the second semiconductor chip. The sealing member seals the first semiconductor chip, the second semiconductor chip, and the insulating sheet. The sealing member is disposed both between the insulating sheet and the first semiconductor chip and between the insulating sheet and the second semiconductor chip.
Public/Granted literature
- US20200168545A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2020-05-28
Information query
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