Invention Grant
- Patent Title: Packaged semiconductor device with multilayer stress buffer
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Application No.: US16197413Application Date: 2018-11-21
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Publication No.: US11031311B2Publication Date: 2021-06-08
- Inventor: Luu Thanh Nguyen
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Ronald O. Neerings; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/48 ; H01L23/29 ; H01L23/31 ; H01L21/56 ; H01L21/78 ; H01L21/02 ; H01L23/00 ; H01L23/495

Abstract:
In a described example, a packaged semiconductor device includes: a semiconductor die with a component proximate to a surface of the semiconductor die; the semiconductor die mounted on a substrate. The component is covered with a first polymer layer with a first modulus and at least a portion of the first polymer layer is covered by at least one second polymer layer with a second modulus and the second modulus is greater than the first modulus. The semiconductor die and a portion of the substrate are covered with mold compound.
Public/Granted literature
- US20200161205A1 PACKAGED SEMICONDUCTOR DEVICE WITH MULTILAYER STRESS BUFFER Public/Granted day:2020-05-21
Information query
IPC分类: