- 专利标题: Semiconductor devices including redistribution layers
-
申请号: US16374418申请日: 2019-04-03
-
公开(公告)号: US11031335B2公开(公告)日: 2021-06-08
- 发明人: Hirokazu Ato , Koji Yasumori
- 申请人: Micron Technology, Inc.
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: TraskBritt
- 主分类号: H01L23/52
- IPC分类号: H01L23/52 ; H01L23/528 ; H01L23/522
摘要:
Semiconductor devices may include a substrate and a redistribution layer. The redistribution layer may include a dielectric material and electrically conductive material. Vias may extend through the dielectric material. A first region of the electrically conductive material may be connected to a first subset of vias in a row from a first lateral side of the row, the first region occupying more than half of a width of the row on the first lateral side. A second region of the electrically conductive material may be connected to a second subset of vias in the row from a second, opposite lateral side of the row, the second region occupying more than half of the width of the row on the second lateral side.
公开/授权文献
- US20200321278A1 SEMICONDUCTOR DEVICES INCLUDING REDISTRIBUTION LAYERS 公开/授权日:2020-10-08
信息查询
IPC分类: