Invention Grant
- Patent Title: Semiconductor structures over active region and methods of forming the structures
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Application No.: US16436925Application Date: 2019-06-11
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Publication No.: US11031389B2Publication Date: 2021-06-08
- Inventor: Jiehui Shu , Hui Zang
- Applicant: GLOBALFOUNDRIES U.S. INC.
- Applicant Address: US CA Santa Clara
- Assignee: GLOBALFOUNDRIES U.S. INC.
- Current Assignee: GLOBALFOUNDRIES U.S. INC.
- Current Assignee Address: US CA Santa Clara
- Agent David Cain
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L27/105 ; H01L21/8234 ; H01L29/40 ; H01L29/423 ; H01L29/06
Abstract:
The present disclosure generally relates to semiconductor devices and processing. The present disclosure also relates to semiconductor structures disposed over active regions, more particularly, via contact structures disposed over such active regions and to methods of forming such semiconductor structures.
Information query
IPC分类:
