- 专利标题： High stability free layer for perpendicular spin torque transfer memory
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申请号： US16327603申请日： 2016-09-30
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公开(公告)号： US11031545B2公开(公告)日： 2021-06-08
- 发明人: Kaan Oguz , Kevin P. O'Brien , Brian S. Doyle , Mark L. Doczy , Charles C. Kuo , Daniel G. Ouellette , Christopher J. Wiegand , Md Tofizur Rahman , Brian Maertz
- 申请人： INTEL CORPORATION
- 申请人地址： US CA Santa Clara
- 专利权人： INTEL CORPORATION
- 当前专利权人： INTEL CORPORATION
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Schwabe, Williamson & Wyatt, P.C.
- 国际申请： PCT/US2016/054821 WO 20160930
- 国际公布： WO2018/063338 WO 20180405
- 主分类号： H01L27/22
- IPC分类号： H01L27/22 ; H01L43/08 ; H01L43/10 ; H01L43/12
摘要：
Systems, apparatus, and methods for magnetoresitive memory are described. An apparatus for magnetoresitive memory includes a fixed layer, a free layer, and a tunneling barrier between the fixed layer and the free layer. The free layer is a new alloy consisting of a composition of Cobalt (Co), Iron (Fe), and Boron (B) intermixed with a non-magnetic metal according to a ratio. A thin insert layer of CoFeB may optionally be added between the alloy and the tunneling barrier.
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