- 专利标题： Semiconductor device structure and method for forming the same
-
申请号： US16395731申请日： 2019-04-26
-
公开(公告)号： US11038058B2公开(公告)日： 2021-06-15
- 发明人: Kuo-Cheng Chiang , Shi-Ning Ju , Ching-Wei Tsai , Kuan-Lun Cheng , Chih-Hao Wang
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Birch, Stewart, Kolasch & Birch, LLP
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/8238 ; H01L29/423 ; H01L29/66 ; H01L27/092
摘要：
A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a dielectric fin structure over the substrate. The semiconductor device structure also includes a semiconductor fin structure adjacent to the dielectric fin structure. The semiconductor device structure also includes a metal gate stack across the dielectric fin structure and the semiconductor fin structure. The semiconductor device structure also includes a source/drain feature over the semiconductor fin structure. The semiconductor device structure also includes a source/drain spacer interposed between the source/drain feature and the dielectric fin structure.
公开/授权文献
信息查询
IPC分类:
