Invention Grant
- Patent Title: Power detector with all transistors being bipolar junction transistors
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Application No.: US16584897Application Date: 2019-09-26
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Publication No.: US11038467B2Publication Date: 2021-06-15
- Inventor: Hwey-Ching Chien
- Applicant: RichWave Technology Corp.
- Applicant Address: TW Taipei
- Assignee: RichWave Technology Corp.
- Current Assignee: RichWave Technology Corp.
- Current Assignee Address: TW Taipei
- Agent Winston Hsu
- Priority: TW108105455 20190219
- Main IPC: H03F3/04
- IPC: H03F3/04 ; H03F1/02 ; H02M7/12 ; H03F3/21 ; G01R19/00 ; H03G7/00 ; G06G7/24

Abstract:
A power detector has a signal input terminal, N limiting amplifiers, N rectifiers and a signal output terminal. N is an integer greater than 1. The signal input terminal receives an input signal, and the signal output terminal outputs a detection signal. The N limiting amplifiers generate N amplified signals according to N attenuated signals having different attenuation. Each limiting amplifier receives one of the N attenuated signals and outputs one of the N amplified signals. Each rectifier receives a corresponding amplified signal and outputs a rectified signal. The detection signal is associated with the sum of N rectified signals outputted from the N rectifiers, and all transistors of the power detector are bipolar junction transistors.
Public/Granted literature
- US20200266764A1 Power detector with all transistors being bipolar junction transistors Public/Granted day:2020-08-20
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