Invention Grant
- Patent Title: Method for manufacturing semiconductor device
-
Application No.: US16933100Application Date: 2020-07-20
-
Publication No.: US11043579B2Publication Date: 2021-06-22
- Inventor: Chih-Hao Wang , Wai-Yi Lien , Gwan-Sin Chang , Yu-Ming Lin , Ching Hsueh , Jia-Chuan You , Chia-Hao Chang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L21/8234 ; H01L21/8238 ; H01L29/417 ; H01L21/84
Abstract:
A method for manufacturing a semiconductor device includes forming a semiconductor fin on a substrate. A dummy gate structure is formed crossing the semiconductor fin. The dummy gate structure is replaced with a metal gate structure. An epitaxial structure is formed in the semiconductor fin after replacing the dummy gate structure with the metal gate structure.
Public/Granted literature
- US20200350422A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2020-11-05
Information query
IPC分类:
