- 专利标题: X-ray based metrology of a high aspect ratio hole
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申请号: US16692949申请日: 2019-11-22
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公开(公告)号: US11047677B2公开(公告)日: 2021-06-29
- 发明人: Benzion Sender
- 申请人: APPLIED MATERIALS ISRAEL LTD.
- 申请人地址: IL Rehovot
- 专利权人: APPLIED MATERIALS ISRAEL LTD.
- 当前专利权人: APPLIED MATERIALS ISRAEL LTD.
- 当前专利权人地址: IL Rehovot
- 代理机构: Kilpatrick Townsend & Stockton LLP
- 主分类号: G01B15/00
- IPC分类号: G01B15/00
摘要:
A method that includes performing multiple test iterations to provide multiple test results; and processing the multiple test results to provide estimates of a conductivity of each of the multiple bottoms segments. The multiple test iterations includes repeating, for each bottom segment of the multiple bottom segments, the steps of: (a) illuminating the bottom segment by a charging electron beam; wherein electrons emitted from the bottom segment due to the illuminating are prevented from exiting the hole; (b) irradiating, by a probing electron beam, an area of an upper surface of the dielectric medium; (c) collecting electrons emitted from the area of the upper surface as a result of the irradiation of the area by the probing electron beam to provide collected electrons; and (d) determining an energy of at least one of the collected electrons to provide a test result.
公开/授权文献
- US20210156682A1 X-RAY BASED METROLOGY OF A HIGH ASPECT RATIO HOLE 公开/授权日:2021-05-27
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