发明授权
- 专利标题： Resist underlayer composition, and method of forming patterns using the composition
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申请号： US16214229申请日： 2018-12-10
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公开(公告)号： US11048169B2公开(公告)日： 2021-06-29
- 发明人: Hyeon Park
- 申请人： SAMSUNG SDI CO., LTD.
- 申请人地址： KR Yongin-si
- 专利权人： SAMSUNG SDI CO., LTD.
- 当前专利权人： SAMSUNG SDI CO., LTD.
- 当前专利权人地址： KR Yongin-si
- 代理机构： Lee IP Law, P.C.
- 优先权： KR10-2017-0180153 20171226
- 主分类号： G03F7/11
- IPC分类号： G03F7/11 ; G03F7/00 ; G03F7/20 ; C08G61/04 ; G03F7/26 ; G03F7/09 ; G03F7/004 ; C08F226/06
摘要：
A resist underlayer composition and a method of forming patterns, the composition including a solvent; and a polymer having a structure where at least one of a first moiety represented by one of Chemical Formula 1-1 to Chemical Formula 1-3 is combined with a third moiety represented by Chemical Formula 3, or at least one of a second moiety represented by one of Chemical Formula 2-1 to Chemical Formula 2-3 is combined with a third moiety represented by Chemical Formula 3
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