- 专利标题： Semiconductor device and alternator using the same
-
申请号： US16056332申请日： 2018-08-06
-
公开(公告)号： US11049965B2公开(公告)日： 2021-06-29
- 发明人: Masaki Shiraishi , Tetsuya Ishimaru , Junichi Sakano , Mutsuhiro Mori , Shinichi Kurita
- 申请人： HITACHI POWER SEMICONDUCTOR DEVICE, LTD.
- 申请人地址： JP Hitachi
- 专利权人： HITACHI POWER SEMICONDUCTOR DEVICE, LTD.
- 当前专利权人： HITACHI POWER SEMICONDUCTOR DEVICE, LTD.
- 当前专利权人地址： JP Hitachi
- 代理机构： Volpe Koenig
- 优先权： JPJP2017-152305 20170807
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/66 ; H01L29/10 ; H03K17/0814 ; H03K17/74 ; H01L27/02 ; H01L29/45
摘要：
A semiconductor device includes a first external electrode with a first electrode surface portion; a second external electrode with a second electrode surface portion; a MOSFET chip with a built-in Zener diode which includes an active region and a peripheral region; a control IC chip which drives the MOSFET chip based on voltage or current between a drain electrode and a source electrode of the MOSFET chip; and a capacitor which supplies power to the MOSFET chip and the control IC chip. The first electrode surface portion is connected to either the drain electrode or the source, the second electrode surface portion is connected to either the source electrode or the drain electrode, a plurality of unit cells of the MOSFET with the built-in Zener diode are provided in the active region, and the breakdown voltage of the Zener diode is set to be lower than that of the peripheral region.
公开/授权文献
- US20190043984A1 SEMICONDUCTOR DEVICE AND ALTERNATOR USING THE SAME 公开/授权日：2019-02-07
信息查询
IPC分类:
