Invention Grant
- Patent Title: Semiconductor device having epitaxial structure
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Application No.: US16205233Application Date: 2018-11-30
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Publication No.: US11049971B2Publication Date: 2021-06-29
- Inventor: Kuang-Hsiu Chen , Sung-Yuan Tsai , Chi-Hsuan Tang , Chun-Wei Yu , Yu-Ren Wang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN201811267020.X 20181029
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/08 ; H01L29/36 ; H01L29/66 ; H01L29/423
Abstract:
A semiconductor device and a method of forming the same, the semiconductor device includes a substrate, a gate structure and an epitaxial structure. The gate structure is disposed on the substrate, and the epitaxial structure is disposed in the substrate, at one side of the gate structure. The epitaxial structure includes a portion being protruded from a top surface of the substrate, and the portion includes a discontinuous sidewall, with a distance between a turning point of the discontinuous sidewalls and the gate structure being a greatest distance between the epitaxial structure and the gate structure.
Information query
IPC分类:
