Invention Grant
- Patent Title: Method for manufacturing semiconductor device
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Application No.: US15847681Application Date: 2017-12-19
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Publication No.: US11056345B2Publication Date: 2021-07-06
- Inventor: Atsuki Fukazawa
- Applicant: ASM IP Holding B.V.
- Applicant Address: NL Almere
- Assignee: ASM IP Holding B.V.
- Current Assignee: ASM IP Holding B.V.
- Current Assignee Address: NL Almere
- Agency: Dorsey & Whitney LLP
- Main IPC: H01L21/285
- IPC: H01L21/285 ; C23C16/455 ; C23C16/34 ; C23C16/517 ; C23C16/06
Abstract:
Examples of a method for manufacturing a semiconductor device include forming an initial film having a film thickness of 1 to 3 nm made of a metal or a metal nitride by applying plasma film formation with plasma power of 0.07 to 0.30 W/cm2 and an RF pulse width within a range of 0.1 to 1 sec, and forming, after forming the initial film, a bulk film made of a metal or metal nitride on the initial film by applying plasma film formation with plasma power higher than the plasma power when the initial film is formed.
Public/Granted literature
- US20190189454A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2019-06-20
Information query
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