- 专利标题： Method for depositing a silicon nitride film and film deposition apparatus
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申请号： US16057125申请日： 2018-08-07
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公开(公告)号： US11075074B2公开(公告)日： 2021-07-27
- 发明人: Hitoshi Kato , Yutaka Takahashi , Kazumi Kubo
- 申请人： Tokyo Electron Limited
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： IPUSA, PLLC
- 优先权： JPJP2017-154742 20170809
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; C23C16/34 ; C23C16/455 ; C23C16/458 ; H01L21/687 ; H01J37/32 ; H01L21/768 ; C23C16/04 ; C23C16/452
摘要：
A method for depositing a silicon nitride film is provided to fill a recessed pattern formed in a surface of a substrate with a silicon nitride film. In the method, a first silicon nitride film is deposited in the recessed pattern formed in the surface of the substrate. The first silicon nitride film has a V-shaped cross section decreasing its film thickness upward from a bottom portion of the recessed pattern. A second silicon nitride film conformal to a surface shape of the first silicon nitride film is deposited.
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