- 专利标题： Radio frequency silicon on insulator structure with superior performance, stability, and manufacturability
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申请号： US16508606申请日： 2019-07-11
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公开(公告)号： US11075109B2公开(公告)日： 2021-07-27
- 发明人: Michael R. Seacrist , Robert W. Standley , Jeffrey L. Libbert , Hariprasad Sreedharamurthy , Leif Jensen
- 申请人： GlobalWafers Co., Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： GlobalWafers Co., Ltd.
- 当前专利权人： GlobalWafers Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Armstrong Teasdale LLP
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; C30B29/06 ; H01L21/322 ; H01L23/66 ; H01L27/12 ; H01L29/06
摘要：
A semiconductor-on-insulator (e.g., silicon-on-insulator) structure having superior radio frequency device performance, and a method of preparing such a structure, is provided by utilizing a single crystal silicon handle wafer sliced from a float zone grown single crystal silicon ingot.
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