Invention Grant
- Patent Title: Thin-film transistor substrate having overlapping thin-film transistor
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Application No.: US16853485Application Date: 2020-04-20
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Publication No.: US11075221B2Publication Date: 2021-07-27
- Inventor: Jong-Hyun Choi , Tae-Jin Kim
- Applicant: Samsung Display Co., Ltd.
- Applicant Address: KR Yongin-Si
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Yongin-Si
- Agency: Innovation Counsel LLP
- Priority: KR10-2016-0165739 20161207
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/78 ; H01L29/786

Abstract:
A thin-film transistor substrate may include a first thin-film transistor and a second thin-film transistor which are disposed on a substrate. The first thin-film transistor may include a first semiconductor layer, a first gate electrode, and a first electrode. The second thin-film transistor may include a second semiconductor layer disposed on the first semiconductor layer and overlapping at least a portion of the first semiconductor layer, a second gate electrode, and a second electrode electrically connected to the first electrode. The second electrode may overlap the first electrode.
Public/Granted literature
- US20200243570A1 THIN-FILM TRANSISTOR SUBSTRATE Public/Granted day:2020-07-30
Information query
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