- 专利标题： Semiconductor power device
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申请号： US15720564申请日： 2017-09-29
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公开(公告)号： US11094814B2公开(公告)日： 2021-08-17
- 发明人: Ya-Yu Yang , Shang-Ju Tu , Tsung-Cheng Chang , Chia-Cheng Liu
- 申请人： EPISTAR CORPORATION
- 申请人地址： TW Hsinchu
- 专利权人： EPISTAR CORPORATION
- 当前专利权人： EPISTAR CORPORATION
- 当前专利权人地址： TW Hsinchu
- 代理机构： Ditthavong, Steiner & Mlotkowski
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/778 ; B82Y99/00 ; H01L29/20 ; H01L21/02 ; H01L29/207
摘要：
A semiconductor power device includes a substrate, a buffer structure formed on the substrate, a barrier structure formed on the buffer structure, a channel layer formed on the barrier structure, and a barrier layer formed on the channel layer. The barrier structure includes a first functional layer on the buffer structure, a first back-barrier layer on the first functional layer, and an interlayer between the first back-barrier layer and the first functional layer. A material of the first back-barrier layer comprises Alx1Ga1-x1N, a material of the first functional layer comprises Alx2Ga1-x2N, 0
公开/授权文献
- US20190103482A1 SEMICONDUCTOR POWER DEVICE 公开/授权日：2019-04-04
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