发明授权
- 专利标题： Stress induction in 3D device channel using elastic relaxation of high stress material
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申请号： US16671724申请日： 2019-11-01
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公开(公告)号： US11094823B2公开(公告)日： 2021-08-17
- 发明人: Kangguo Cheng , Nicolas J. Loubet , Xin Miao , Alexander Reznicek
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 代理机构： Tutunjian & Bitetto, P.C.
- 代理商 Erik Johnson
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/06 ; H01L21/306 ; H01L29/66 ; H01L29/08 ; H01L29/775 ; B82Y10/00 ; H01L29/10
摘要：
A method for inducing stress in a device channel includes forming a stress adjustment layer on a substrate, the stress adjustment layer including an as deposited stress due to crystal lattice differences with the substrate. A device channel layer is formed on the stress adjustment layer. Cuts are etched through the device channel layer and the stress adjustment layer to release the stress adjustment layer to induce stress in the device channel layer. Source/drain regions are formed adjacent to the device channel layer.
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