- 专利标题： Silicon carbide substrate, method for manufacturing silicon carbide substrate, and method for manufacturing silicon carbide semiconductor device
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申请号： US16483754申请日： 2018-02-20
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公开(公告)号： US11094835B2公开(公告)日： 2021-08-17
- 发明人: Tomoaki Furusho , Takanori Tanaka , Takeharu Kuroiwa , Toru Ujihara , Shunta Harada , Kenta Murayama
- 申请人： Mitsubishi Electric Corporation , NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY
- 申请人地址： JP Tokyo; JP Aichi
- 专利权人： Mitsubishi Electric Corporation,NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY
- 当前专利权人： Mitsubishi Electric Corporation,NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY
- 当前专利权人地址： JP Tokyo; JP Aichi
- 代理机构： Xsensus LLP
- 优先权： JPJP2017-062447 20170328
- 国际申请： PCT/JP2018/005948 WO 20180220
- 国际公布： WO2018/180013 WO 20181004
- 主分类号： H01L29/868
- IPC分类号： H01L29/868 ; C23C16/32 ; C30B25/20 ; C30B29/36 ; H01L21/02 ; H01L21/205
摘要：
It is an object of the present invention to provide a silicon carbide substrate having a low defect density that does not contaminate a process device and a silicon carbide semiconductor device including the silicon carbide substrate. A silicon carbide substrate according to the present invention is a silicon carbide substrate including: a substrate inner portion; and a substrate outer portion surrounding the substrate inner portion, wherein non-dopant metal impurity concentration of the substrate inner portion is 1×1016 cm−3 or more, and a region of the substrate outer portion at least on a surface side thereof is a substrate surface region in which the non-dopant metal impurity concentration is less than 1×1016 cm−3.
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