Invention Grant
- Patent Title: Method of fabricating semiconductor structure
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Application No.: US16398013Application Date: 2019-04-29
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Publication No.: US11097941B2Publication Date: 2021-08-24
- Inventor: Yi-Hsien Chang , Tzu-Heng Wu , Chun-Ren Cheng , Shih-Wei Lin , Jung-Kuo Tu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: B81B3/00
- IPC: B81B3/00

Abstract:
A method includes forming a recess in a first substrate, bonding a micro-electro-mechanical systems (MEMS) substrate to the first substrate after forming the recess in the first substrate, forming an anti-stiction layer over the micro-electro-mechanical systems (MEMS) substrate, pattering the anti-stiction layer, etching the MEMS substrate to form a MEMS device, and bonding the MEMS device and the first substrate to a second substrate. The patterned anti-stiction layer is between the MEMS device and the second substrate.
Public/Granted literature
- US20190256347A1 METHOD OF FABRICATING SEMICONDUCTOR STRUCTURE Public/Granted day:2019-08-22
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