- 专利标题： Semiconductor device and method of manufacture
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申请号： US16712201申请日： 2019-12-12
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公开(公告)号： US11101135B2公开(公告)日： 2021-08-24
- 发明人: Jian-Jou Lian , Li-Min Chen , Neng-Jye Yang , Ming-Hsi Yeh , Shun Wu Lin , Kuo-Bin Huang
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L29/66 ; H01L21/3213 ; H01L21/02 ; H01L29/08 ; H01L29/78 ; H01L29/165 ; H01L29/267
摘要：
An etchant is utilized to remove a semiconductor material. In some embodiments an oxidizer is added to the etchant in order to react with surrounding semiconductor material and form a protective layer. The protective layer is utilized to help prevent damage that could occur from the other components within the etchant.
公开/授权文献
- US20200161137A1 Semiconductor Device and Method of Manufacture 公开/授权日：2020-05-21
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