- 专利标题： Ferroelectric memory array surrounded by ferroelectric dummy capacitors
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申请号： US15356749申请日： 2016-11-21
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公开(公告)号： US11101275B2公开(公告)日： 2021-08-24
- 发明人: Takanori Ozawa , Izumi Yano , Toshiyuki Shiraishi
- 申请人： ROHM CO., LTD.
- 申请人地址： JP Kyoto
- 专利权人： ROHM CO., LTD.
- 当前专利权人： ROHM CO., LTD.
- 当前专利权人地址： JP Kyoto
- 代理机构： Rabin & Berdo, P.C.
- 优先权： JPJP2015-247771 20151218
- 主分类号： H01L27/11514
- IPC分类号： H01L27/11514 ; H01L27/11507 ; H01L49/02
摘要：
A nonvolatile logic cell (nonvolatile storage element) 21 includes ferroelectric capacitors 25 and MOSFETs 26. A plurality of ferroelectric dummy capacitors 32 and 33 are formed in a periphery of the nonvolatile logic cell 21. Each of the ferroelectric capacitors 25 and the ferroelectric dummy capacitors 32 and 33 includes a lower electrode 51, a ferroelectric film 52 formed above the lower electrode 51, and an upper electrode 53 formed above the ferroelectric film 52.
公开/授权文献
- US20170179140A1 SEMICONDUCTOR DEVICE 公开/授权日：2017-06-22
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