- 专利标题： Cross-point multilayer stackable ferroelectric field-effect transistor random access memory
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申请号： US16397524申请日： 2019-04-29
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公开(公告)号： US11101290B2公开(公告)日： 2021-08-24
- 发明人: Alexander Reznicek , Bahman Hekmatshoartabari
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Ryan, Mason & Lewis, LLP
- 代理商 Daniel Morris
- 主分类号： H01L27/11597
- IPC分类号： H01L27/11597 ; H01L29/786 ; H01L29/04 ; H01L29/51 ; H01L29/78 ; H01L29/66 ; H01L21/311 ; H01L21/3213 ; H01L29/49 ; H01L21/28 ; H01L21/02
摘要：
A method for manufacturing a semiconductor memory device includes forming a first polysilicon layer on a conductive layer, forming a second polysilicon layer stacked on the first polysilicon layer, and forming a third polysilicon layer stacked on the second polysilicon layer. In the method, a stacked structure of the first, second and third polysilicon layers is patterned into a plurality of stacked structures spaced apart from each other on the conductive layer. Ferroelectric dielectric layers are formed on respective second polysilicon layers of the plurality of stacked structures, and metal layers are formed on the ferroelectric dielectric layers.
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