Invention Grant
- Patent Title: Image sensing device
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Application No.: US16687304Application Date: 2019-11-18
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Publication No.: US11101306B2Publication Date: 2021-08-24
- Inventor: Donghyun Woo
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Perkins Coie LLP
- Priority: KR10-2019-0087322 20190719
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H04N5/351 ; H04N5/3745 ; H04N5/378

Abstract:
An image sensor includes a substrate and first and second transfer gates. The substrate includes not only a photodiode in which photocharges corresponding to the amount of incident light are accumulated, but also a floating diffusion (FD) region in which the photocharges are received and accumulated. The first and second transfer gates transmit the photocharges from the photodiode to the floating diffusion (FD) region. At least some parts of the first transfer gate are formed to overlap with the second transfer gate.
Public/Granted literature
- US20210020674A1 IMAGE SENSING DEVICE Public/Granted day:2021-01-21
Information query
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