- 专利标题: Semiconductor device and method for fabricating the same
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申请号: US16570750申请日: 2019-09-13
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公开(公告)号: US11107820B2公开(公告)日: 2021-08-31
- 发明人: Chih-Wei Huang
- 申请人: NANYA TECHNOLOGY CORPORATION
- 申请人地址: TW New Taipei
- 专利权人: NANYA TECHNOLOGY CORPORATION
- 当前专利权人: NANYA TECHNOLOGY CORPORATION
- 当前专利权人地址: TW New Taipei
- 代理机构: Muncy, Geissler, Olds & Lowe, P.C.
- 主分类号: H01L27/108
- IPC分类号: H01L27/108 ; H01L23/522 ; H01L23/528 ; H01L23/532 ; H01L21/768 ; H01L21/02 ; H01L49/02
摘要:
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a plurality of capacitor contacts positioned over the substrate, at least one of the plurality of capacitor contacts having a neck portion and a head portion over the neck portion, wherein an upper width of the head portion is larger than an upper width of the neck portion; a plurality of bit line contacts positioned over the substrate and a plurality of bit lines positioned over the plurality of bit line contacts, wherein at least one of the plurality of bit line is a wavy line extending between two adjacent capacitor contacts; and a capacitor structure positioned over the head portion.
公开/授权文献
- US20210082922A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 公开/授权日:2021-03-18
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