- 专利标题： Oxide semiconductor film and method for producing same
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申请号： US16313239申请日： 2017-06-30
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公开(公告)号： US11107926B2公开(公告)日： 2021-08-31
- 发明人: Tomochika Tanikawa , Toshimi Hitora
- 申请人： FLOSFIA INC.
- 申请人地址： JP Kyoto
- 专利权人： FLOSFIA INC.
- 当前专利权人： FLOSFIA INC.
- 当前专利权人地址： JP Kyoto
- 代理机构： Wenderoth, Lind & Ponack, L.L.P.
- 优先权： JPJP2016-131158 20160630
- 国际申请： PCT/JP2017/024274 WO 20170630
- 国际公布： WO2018/004008 WO 20180104
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L29/12 ; H01L29/78 ; H01L21/02
摘要：
A new and useful oxide semiconductor film with enhanced p-type semiconductor property and the method of manufacturing the oxide semiconductor film are provided. A method of manufacturing an oxide semiconductor film including: generating atomized droplets by atomizing a raw material solution containing a metal of Group 9 of the periodic table and/or a metal of Group 13 of the periodic table and a p-type dopant; carrying the atomized droplets onto a surface of a base by using a carrier gas; causing a thermal reaction of the atomized droplets adjacent to the surface of the base under oxygen atmosphere to form the oxide semiconductor film on the base.
公开/授权文献
- US20190157400A1 OXIDE SEMICONDUCTOR FILM AND METHOD FOR PRODUCING SAME 公开/授权日：2019-05-23
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