- 专利标题: Semiconductor device
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申请号: US16690891申请日: 2019-11-21
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公开(公告)号: US11107929B2公开(公告)日: 2021-08-31
- 发明人: Shunpei Yamazaki , Tsutomu Murakawa , Hideomi Suzawa
- 申请人: Semiconductor Energy Laboratory Co., Ltd.
- 申请人地址: JP Atsugi
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Atsugi
- 代理机构: Robinson Intellectual Property Law Office
- 代理商 Eric J. Robinson
- 优先权: JPJP2018-239693 20181221
- 主分类号: H01L27/00
- IPC分类号: H01L27/00 ; H01L29/00 ; H01L29/786 ; H01L29/417
摘要:
A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes a first insulator, a second insulator over the first insulator, a third insulator over the second insulator, a fourth insulator and a first conductor over the third insulator, a fifth insulator over the fourth insulator and the first conductor, a first oxide over the fifth insulator, a second conductor and a third conductor over the first oxide, a second oxide over the first oxide and between the second conductor and the third conductor, a sixth insulator over the second oxide, and a fourth conductor over the sixth insulator. The hydrogen concentration of the second insulator is lower than that of the first insulator. The hydrogen concentration of the third insulator is lower than that of the second insulator.