- 专利标题： Methods of manufacturing three-dimensional arrays with MTJ devices including a free magnetic trench layer and a planar reference magnetic layer
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申请号： US16121495申请日： 2018-09-04
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公开(公告)号： US11107978B2公开(公告)日： 2021-08-31
- 发明人: Satoru Araki
- 申请人： SPIN MEMORY, Inc.
- 申请人地址： US CA Fremont
- 专利权人： SPIN MEMORY, Inc.
- 当前专利权人： SPIN MEMORY, Inc.
- 当前专利权人地址： US CA Fremont
- 主分类号： H01L43/12
- IPC分类号： H01L43/12 ; H01L43/02 ; H01L43/08 ; H01F10/32 ; G11C11/16 ; H01L27/22 ; H01F41/32 ; H01L43/10
摘要：
A Magnetic Tunnel Junction (MTJ) device can include a reference magnetic layer having one or more trenches disposed therein. One or more sections of a tunnel barrier layer can be disposed on the walls of the one or more trenches. One or more sections of a free magnetic layer can be disposed on the one or more sections of the tunnel barrier layer in the one or more trenches. One or more sections of a conductive layer can be disposed on the one or more sections of the free magnetic layer in the one or more trenches. One or more insulator blocks can be disposed between corresponding sections of the tunnel barrier layer, corresponding sections of the free magnetic layer and corresponding sections of the conductive layer in the one or more trenches.
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