Invention Grant
- Patent Title: Deposition equipment and method of fabricating semiconductor device using the same
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Application No.: US16386970Application Date: 2019-04-17
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Publication No.: US11111579B2Publication Date: 2021-09-07
- Inventor: Sun Yong Hwang , Hyun Su Kim , Eun-Ok Lee , Taek Jung Kim , Hyo Jung Noh , Ji Won Yu
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2018-0053889 20180510
- Main IPC: C23C16/40
- IPC: C23C16/40 ; C23C16/455 ; C23C16/44

Abstract:
A deposition equipment is provided. The deposition equipment includes: a reaction chamber including an upper plate and a container body, the upper plate including a gas supplier for injecting a processing gas; a wafer chuck including an upper surface on which a wafer is loaded, in the reaction chamber, with the upper surface of the wafer chuck facing the upper plate; and a processing gas shielding section which prevents the processing gas from being adsorbed to the upper surface of the wafer chuck and is disposed between the upper plate and the wafer chuck in a state in which the wafer is removed from the wafer chuck. The processing gas shielding section includes a shutter which is plate-like, and the shutter includes a region including a gas discharge section for jetting a purging gas toward the wafer chuck.
Information query
IPC分类: