Invention Grant
- Patent Title: Thin film transistor panel, display device, and method of manufacturing the thin film transistor panel
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Application No.: US16653916Application Date: 2019-10-15
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Publication No.: US11114472B2Publication Date: 2021-09-07
- Inventor: Byeong Beom Kim , Heon Sik Ha , Jin Ho Hwang
- Applicant: Samsung Display Co., Ltd.
- Applicant Address: KR Yongin-Si
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Yongin-Si
- Agency: Innovation Counsel LLP
- Priority: KR10-2018-0166526 20181220
- Main IPC: H01L27/12
- IPC: H01L27/12

Abstract:
A transistor panel may include a substrate, a transistor, a first inorganic buffer layer, and an inorganic fluorine-containing buffer layer. The transistor may overlap the substrate and may include a semiconductor layer. The first inorganic buffer layer may be disposed between the substrate and the semiconductor layer. The inorganic fluorine-containing buffer layer may be disposed between the first inorganic buffer layer and the semiconductor layer and may contain fluorine in a range of 0.5 at % to 2 at %.
Information query
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