Invention Grant
- Patent Title: Semiconductor device
-
Application No.: US15892373Application Date: 2018-02-08
-
Publication No.: US11114562B2Publication Date: 2021-09-07
- Inventor: Purakh Raj Verma , Chia-Huei Lin , Kuo-Yuh Yang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN201810018449.9 20180109
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/786 ; H01L29/10 ; H01L29/06 ; H01L29/423 ; H01L29/66 ; H01L21/285 ; H01L21/266
Abstract:
A semiconductor device includes: a first gate structure on a substrate; a first drain region having a first conductive type adjacent to one side of the first gate structure; a source region having the first conductive type adjacent to another side of the first gate structure; and a first body implant region having a second conductive type under part of the first gate structure.
Public/Granted literature
- US20190214497A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-07-11
Information query
IPC分类:
