Invention Grant
- Patent Title: Capacity expansion channels for memory sub-systems
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Application No.: US16672321Application Date: 2019-11-01
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Publication No.: US11119658B2Publication Date: 2021-09-14
- Inventor: Edward McGlaughlin
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Lowenstein Sandler LLP
- Main IPC: G06F3/06
- IPC: G06F3/06

Abstract:
A memory sub-system includes a memory sub-system controller comprising at least one host channel, a memory device comprising a plurality of memory die, and at least one input/output (I/O) expander circuit coupled to the at least one host channel of the memory sub-system controller and to the memory device. The at least one I/O expander circuit includes one or more I/O buffers to send and receive signals on the at least one host channel, a selection circuit coupled to the one or more I/O buffers, and command processing logic to enable the selection circuit to route the signals on a selected one of a plurality of expansion channels coupled to the at least one I/O expander circuit. Each of the plurality of expansion channels is coupled to a corresponding subset of the plurality of memory die.
Public/Granted literature
- US20210132798A1 CAPACITY EXPANSION FOR MEMORY SUB-SYSTEMS Public/Granted day:2021-05-06
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